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2SC6077
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6077
Power Amplifier Applications Power Switching Applications
* * Low collector saturation voltage: VCE (sat) = 0.5 V (max)IC = 1A High-speed switching: tstg = 0.4 s (typ) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 160 160 80 9 3.0 5.0 1.0 1.8 150 -55150 Unit V V V V A A A W C C 1 : BASE 2 : COLLECTORHEAT SINK 3 : EMITTER
JEDEC JEITA TOSHIBA Weight:1.5g(typ)

2-10T1A
Electrical Characteristics (Ta = 25C)
Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Rise time VCE (sat) (1) VCE (sat) (2) VBE (sat) fT Cob tr IB1 Test Conditions VCB = 160 V, IE = 0 VEB = 9 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1 mA VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 50 mA IC = 1 A, IB = 100 mA IC = 1 A, IB = 100 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0,f = 1MHZ 20 s IB1 IB2 Output 24 Min 80 150 180 100 Typ. 150 14 0.05 Max 1.0 1.0 450 0.3 0.5 1.5 V V V MHZ pF Unit uA uA V
Input IB2
Switching time
Storage time
tstg
0.4
us
VCC = 24 V Fall time tf IB1 = -IB2 = 100 mA Duty cycle 1% 0.15
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2SC6077
Marking
C6077
Part No. Lot code A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SC6077
IC - VCE
3 300 100 50 30 2 10 3
IC - VBE
Common emitter VCE = 2 V Single nonrepetitive pulse
(A)
IC
IC
(A)
2 Ta = 100 5
Collector current
Collector current
25 1 - 55
1 IB = 2 mA Common emitter Ta = 25C Single nonrepetitive pulse 1 2 3 4 5
0 0
0 0
0.4
0.8
1.2
1.6
2
Collector-emitter voltage
VCE
(V)
Base-emitter voltage
VBE
(V)
hFE - IC
1000 Ta = 100C 10
VCE (sat) - IC Collector-emitter saturation voltage VCE (sat) (V)
Common emitter IC/IB = 10 Single nonrepetitive pulse
hFE
-55 100
1
25
DC current gain
0.1 Ta = 100C -55 0.01 25
10
Common emitter VCE = 2 V Single nonrepetitive pulse 1 0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
10
Collector current
IC
(A)
Collector current
IC
(A)
VBE (sat) - IC
10 Common emitter IC/IB = 10 Single nonrepetitive pulse
Base -emitter saturation voltage VBE (sat) (V)
-55 25
1
Ta = 100C
0.1 0.001
0.01
0.1
1
10
Collector current
IC
(A)
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2SC6077
rth - tw
100
Transient thermal impedance rth (/W)
10
1 0.001
Single nonrepetitive pulse Ta = 25C Curves should be applied in thermal limited area. 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe Operating Area
10 IC max. (pulsed)* IC max. (continuous) 100 ms* 1 ms* 10 ms*
Collector current
IC
(A)
1
0.1
DC operation Ta=25
0.01
* Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature.
0.001 0.1
VCEO MAX. 10 100
1
Collector-emitter voltage
VCE (V)
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2SC6077
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2006-10-20

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